DMG4N60SJ3
MOSFET N-CH 600V 3A TO251Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMG4N60SJ3 is a 600V N-Channel Power MOSFET designed for efficient switching applications. This device offers a continuous drain current capability of 3A at 25°C with a maximum power dissipation of 41W (Tc). The low on-resistance, specified at 2.5 Ohms maximum at 2A and 10V Vgs, contributes to reduced conduction losses. Key parameters include a drain-source breakdown voltage (Vdss) of 600V, a threshold voltage (Vgs(th)) of 4.5V maximum, and a gate charge (Qg) of 14.3 nC maximum at 10V. Input capacitance (Ciss) is 532 pF maximum at 25V Vds. The DMG4N60SJ3 is housed in a TO-251 (IPAK) through-hole package, suitable for a wide operating temperature range of -55°C to 150°C. This component finds application in power supply units, lighting, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 41W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-251 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 532 pF @ 25 V |
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