DMG4N60SCT
MOSFET N-CH 600V 4.5A TO220ABManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated's DMG4N60SCT is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 4.5A at 25°C, with a maximum power dissipation of 113W. The device exhibits a low on-resistance (Rds On) of 2.5 Ohm at an Id of 2A and Vgs of 10V. Key parameters include a gate charge (Qg) of 14.3 nC and input capacitance (Ciss) of 532 pF, both specified at 10V and 25V respectively. The DMG4N60SCT is housed in a TO-220-3 package suitable for through-hole mounting and operates across an extended temperature range of -55°C to 150°C. This MOSFET is utilized in power supply, lighting, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 113W (Ta) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 532 pF @ 25 V |
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