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DMG4812SSS-13

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DMG4812SSS-13

MOSFET N-CH 30V 8A 8SO

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMG4812SSS-13 is an N-Channel MOSFET designed for general-purpose switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous Drain current (Id) of 8 A at 25°C, with a maximum power dissipation of 1.54 W (Ta). The low on-resistance of 15 mOhm at 10.7 A and 10 V gate drive ensures efficient power transfer. Key parameters include a maximum gate charge (Qg) of 18.5 nC at 10 V and an input capacitance (Ciss) of 1849 pF at 15 V. The integrated Schottky diode within the package provides enhanced body diode performance. This device is supplied in an 8-SOIC package suitable for surface mounting and operates across a temperature range of -55°C to 150°C. It is commonly utilized in power management, automotive, and industrial applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Rds On (Max) @ Id, Vgs15mOhm @ 10.7A, 10V
FET FeatureSchottky Diode (Body)
Power Dissipation (Max)1.54W (Ta)
Vgs(th) (Max) @ Id2.3V @ 250µA
Supplier Device Package8-SO
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1849 pF @ 15 V

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