DMG4812SSS-13
MOSFET N-CH 30V 8A 8SOManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMG4812SSS-13 is an N-Channel MOSFET designed for general-purpose switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous Drain current (Id) of 8 A at 25°C, with a maximum power dissipation of 1.54 W (Ta). The low on-resistance of 15 mOhm at 10.7 A and 10 V gate drive ensures efficient power transfer. Key parameters include a maximum gate charge (Qg) of 18.5 nC at 10 V and an input capacitance (Ciss) of 1849 pF at 15 V. The integrated Schottky diode within the package provides enhanced body diode performance. This device is supplied in an 8-SOIC package suitable for surface mounting and operates across a temperature range of -55°C to 150°C. It is commonly utilized in power management, automotive, and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 10.7A, 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 1.54W (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1849 pF @ 15 V |
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