DMG4712SSS-13
MOSFET N-CH 30V 11.2A 8SOPManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated DMG4712SSS-13 is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V Drain-Source Voltage (Vdss) and a continuous drain current capability of 11.2A at 25°C. The low on-resistance of 14mOhm at 11.2A and 10V gate-source voltage minimizes conduction losses. Integrated within the package is a Schottky diode, enhancing switching performance. The MOSFET is housed in an 8-SOIC package, suitable for surface mounting and offering a power dissipation of 1.55W. Key parameters include a gate charge of 45.7 nC and an input capacitance of 2296 pF. Operating across a temperature range of -55°C to 150°C, this component is utilized in automotive and industrial power management systems. The device is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 11.2A, 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | 1.55W (Ta) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 45.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2296 pF @ 15 V |
Request a Quote
Clients Also Buy
DMN31D6UT-7
MOSFET N-CH 30V 350MA SOT523
DMN601WKQ-13
MOSFET N-CH 60V SOT323
DMN95H2D2HCTI
MOSFET N-CH 950V 6A ITO220AB
