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DMG4468LFG

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DMG4468LFG

MOSFET N-CH 30V 7.62A 8DFN

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated DMGS4468LFG is an N-Channel Power MOSFET designed for high-performance applications. This component features a 30V Drain-Source Voltage (Vdss) and a continuous drain current capability of 7.62A at 25°C (Ta). The low on-resistance is specified at 15mOhm maximum at 11.6A and 10V Vgs. Key electrical parameters include a maximum gate charge (Qg) of 18.85 nC at 10V Vgs and an input capacitance (Ciss) of 867 pF maximum at 10V Vds. The MOSFET operates across a wide temperature range of -55°C to 150°C (TJ). The DMG4468LFG is presented in an 8-PowerUDFN package, specifically the U-DFN3030-8, suitable for surface mounting. This device is commonly utilized in power management, automotive, and industrial sectors requiring efficient switching and robust thermal performance. The device is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerUDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7.62A (Ta)
Rds On (Max) @ Id, Vgs15mOhm @ 11.6A, 10V
FET Feature-
Power Dissipation (Max)990mW (Ta)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageU-DFN3030-8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs18.85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds867 pF @ 10 V

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