DMG4435SSS-13
MOSFET P-CH 30V 7.3A 8SOPManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMG4435SSS-13 is a P-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 7.3A at 25°C. With a low on-resistance (Rds On) of 16mOhm at 11A and 20V, it ensures efficient power handling, dissipating a maximum of 2.5W (Ta). The device is housed in an 8-SOIC package, suitable for surface mounting, and operates across a temperature range of -55°C to 150°C. Key electrical characteristics include a Gate Charge (Qg) of 35.4 nC at 10V and an input capacitance (Ciss) of 1614 pF at 15V. This MOSFET is commonly utilized in power management, automotive systems, and industrial control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 11A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 20V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 35.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1614 pF @ 15 V |
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