DMG3N60SCT
MOSFET N-CH 600V 3.3A TO220ABManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMG3N60SCT is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 3.3 A at 25°C (Tc). The Rds(On) is specified at a maximum of 3.5 Ohms when driven at 10 V with a drain current of 1.5 A. The device has a maximum power dissipation of 104 W (Tc) and a gate charge (Qg) of 12.6 nC at 10 V. The DMG3N60SCT is housed in a TO-220AB (Type TH) package, suitable for through-hole mounting. Operating temperature range is from -55°C to 150°C (TJ). This component is AEC-Q101 qualified and graded for automotive applications, making it suitable for power management in electric vehicles and other demanding automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB (Type TH) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 354 pF @ 25 V |
| Qualification | AEC-Q101 |
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