DMG3415UFY4-7
MOSFET P-CH 16V 2.5A DFN2015H4-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated DMG3415UFY4-7 is a P-Channel enhancement mode MOSFET designed for efficient power management. This device features a 16V drain-source breakdown voltage (Vdss) and a continuous drain current rating of 2.5A at 25°C ambient. The low on-resistance, specified at a maximum of 39mOhm at 4A and 4.5V Vgs, minimizes conduction losses. It supports a wide gate-source drive voltage range from 1.8V to 4.5V, with a threshold voltage (Vgs(th)) of 1V maximum at 250µA. The DMG3415UFY4-7 offers a gate charge of 10nC maximum at 4.5V Vgs and an input capacitance (Ciss) of 281.9pF maximum at 10V Vds. With a maximum power dissipation of 400mW at 25°C ambient, it is suitable for operation across a temperature range of -55°C to 150°C. The component is housed in a compact DFN2015H4-3 package, ideal for surface mounting applications. This MOSFET finds utility in various industries including consumer electronics, industrial automation, and battery management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 400mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | DFN2015H4-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 16 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 281.9 pF @ 10 V |
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