DMG10N60SCT
MOSFET N-CH 600V 12A TO220ABManufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Diodes Incorporated N-Channel Power MOSFET, part number DMG10N60SCT, offers a 600V drain-source breakdown voltage and a continuous drain current of 12A at 25°C. This TO-220AB packaged device features a maximum power dissipation of 178W at 25°C (Tc) and a low on-resistance of 750mOhm at 5A, 10V. Key parameters include a gate charge of 35nC (max) at 10V and input capacitance of 1587pF (max) at 16V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power supply units, lighting, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 178W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB (Type TH) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1587 pF @ 16 V |
Request a Quote
Clients Also Buy
DMN3008SFGQ-13
MOSFET N-CH 30V PWRDI3333
DMP21D0UFB-7
MOSFET P-CH 20V 770MA 3DFN
DMTH43M8LFGQ-13
MOSFET N-CH 40V PWRDI3333
