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DMG10N60SCT

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DMG10N60SCT

MOSFET N-CH 600V 12A TO220AB

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated N-Channel Power MOSFET, part number DMG10N60SCT, offers a 600V drain-source breakdown voltage and a continuous drain current of 12A at 25°C. This TO-220AB packaged device features a maximum power dissipation of 178W at 25°C (Tc) and a low on-resistance of 750mOhm at 5A, 10V. Key parameters include a gate charge of 35nC (max) at 10V and input capacitance of 1587pF (max) at 16V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power supply units, lighting, and industrial motor control.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs750mOhm @ 5A, 10V
FET Feature-
Power Dissipation (Max)178W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220AB (Type TH)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1587 pF @ 16 V

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