BSS126SK-7
DIODE GP SOT23Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated N-Channel MOSFET, BSS126SK-7, is a depletion-mode device with a 600V drain-source breakdown voltage. This surface-mount component, housed in a SOT-23-3 package, offers a continuous drain current of 30mA (Ta) and a maximum power dissipation of 1W (Ta). The on-resistance (Rds On) is specified as 500 Ohms at 16mA and 10V. Featuring a gate charge of 2 nC (max) at 5V and input capacitance (Ciss) of 30.9 pF (max) at 25V, this MOSFET is suitable for applications requiring high voltage switching and control. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30mA (Ta) |
| Rds On (Max) @ Id, Vgs | 500Ohm @ 16mA, 10V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 8µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 30.9 pF @ 25 V |
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