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BSS126SK-13

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BSS126SK-13

DIODE GP SOT23

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated N-Channel MOSFET, part number BSS126SK-13, is a depletion-mode device offering a 600V drain-to-source voltage. This surface mount component, packaged in a SOT-23-3 (TO-236-3, SC-59), features a continuous drain current of 30mA at 25°C and a maximum power dissipation of 1W. The on-resistance (Rds On) is specified at 500 Ohms maximum at 16mA and 10V gate-source voltage. Key parameters include a gate charge of 2 nC at 5V and input capacitance of 30.9 pF at 25V. With a gate-source voltage tolerance of ±20V and a threshold voltage of 1.4V at 8µA, this MOSFET is suitable for applications requiring high voltage switching in industrial and consumer electronics. It operates across a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30mA (Ta)
Rds On (Max) @ Id, Vgs500Ohm @ 16mA, 10V
FET FeatureDepletion Mode
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id1.4V @ 8µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)0V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds30.9 pF @ 25 V

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