BSS123ATA
MOSFET N-CH 100V 170MA SOT23-3Manufacturer: Diodes Incorporated
Categories: Single FETs, MOSFETs
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Diodes Incorporated BSS123ATA is a N-Channel MOSFET designed for surface mount applications. This component features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 170mA at 25°C. The Rds On is specified at a maximum of 6 Ohms when conducting 170mA with a 10V gate-to-source voltage. With a maximum power dissipation of 360mW (Ta) and a low threshold voltage (Vgs(th)) of 2V at 1mA, this device is suitable for various electronic switching and amplification tasks. The input capacitance (Ciss) is a maximum of 25pF at 25V. The BSS123ATA is packaged in a SOT-23-3 (TO-236-3, SC-59) and supplied on tape and reel. This MOSFET finds application in consumer electronics and industrial control systems. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170mA (Ta) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 170mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 25 pF @ 25 V |
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