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BSS123-7

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BSS123-7

MOSFET N-CH 100V 170MA SOT23-3

Manufacturer: Diodes Incorporated

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Diodes Incorporated BSS123-7 is a surface-mount N-Channel MOSFET housed in a SOT-23-3 package. This component features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 170mA at 25°C. The device offers a maximum on-resistance (Rds On) of 6 Ohms at 170mA and 10V gate-source voltage. With a maximum power dissipation of 300mW (Ta), it is suitable for applications requiring low power switching. Key specifications include an input capacitance (Ciss) of 60 pF at 25V and an operating temperature range of -55°C to 150°C. This MOSFET is commonly utilized in consumer electronics and industrial automation systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C170mA (Ta)
Rds On (Max) @ Id, Vgs6Ohm @ 170mA, 10V
FET Feature-
Power Dissipation (Max)300mW (Ta)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds60 pF @ 25 V

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