LSC06065Q8
DIODE SIL CARB 650V 6A DFN8080Manufacturer: Diodes Incorporated
Categories: Single Diodes
Quality Control: Learn More
Diodes Incorporated LSC06065Q8 is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This surface-mount component offers a repetitive peak reverse voltage rating of 650 V and an average rectified forward current capability of 6 A. The forward voltage drop at 6 A is a maximum of 1.7 V. Featuring a remarkably low reverse leakage current of 200 µA at 650 V, this diode exhibits no reverse recovery time above 500 mA, contributing to increased system efficiency. The LSC06065Q8 is housed in a DFN8080 package, specifically a 4-PowerTSFN, and operates over a wide junction temperature range of -55°C to 175°C. Its advanced SiC technology makes it suitable for demanding power conversion circuits in industries such as electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | DFN8080 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 6 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
Request a Quote
Clients Also Buy
SBRT15U100SP5-13D
DIODE SBR 100V 15A POWERDI5
SBRT2M10LP-7
DIODE SBR 10V 2A 3DFN
S1K-13
DIODE GEN PURP 800V 1A SMA
