LSC04065Q8
DIODE SIL CARB 650V 4A DFN8080Manufacturer: Diodes Incorporated
Categories: Single Diodes
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The Diodes Incorporated LSC04065Q8 is a 650V, 4A Silicon Carbide (SiC) Schottky diode designed for high-performance power applications. Featuring a low forward voltage drop of 1.7V at 4A and a reverse leakage current of 170 µA at 650V, this component offers excellent efficiency. Its DFN8080 package provides a compact footprint for surface mounting, suitable for demanding environments with an operating temperature range of -55°C to 175°C. The LSC04065Q8 is notable for its zero reverse recovery time, enabling faster switching frequencies and reduced switching losses. This diode is a key component in advanced power conversion systems across automotive, industrial, and telecommunications sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | DFN8080 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
| Current - Reverse Leakage @ Vr | 170 µA @ 650 V |
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