DSC10120
DIODE SIL CARB 1.2KV 10A TO220ACManufacturer: Diodes Incorporated
Categories: Single Diodes
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Diodes Incorporated DSC10120 is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This component offers a maximum DC reverse voltage (Vr) of 1200 V and an average rectified forward current (Io) of 10 A. The forward voltage (Vf) is specified at a maximum of 1.7 V at 10 A. Featuring zero reverse recovery time, the DSC10120 is suitable for demanding power conversion circuits. Its TO-220AC (Type WX) package facilitates through-hole mounting, and it operates across a junction temperature range of -55°C to 175°C. The device exhibits a reverse leakage current (Ir) of 640 µA at its maximum reverse voltage. This SiC diode finds utility in power supplies, electric vehicle charging, and industrial motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 611pF @ 100mV, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO220AC (Type WX) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 640 µA @ 1200 V |
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