DSC08C065D1-13
SILICON CARBIDE RECTIFIER TO252Manufacturer: Diodes Incorporated
Categories: Single Diodes
Quality Control: Learn More
Diodes Incorporated DSC08C065D1-13 is a Silicon Carbide (SiC) Schottky rectifier. This component offers a 650 V reverse voltage rating and an average rectified forward current (Io) of 8 A. The forward voltage drop (Vf) is a maximum of 1.7 V at 8 A. It exhibits a reverse leakage current of 200 µA at 650 V. The device features a fast switching speed, characterized by a recovery time of less than 500 ns for currents greater than 200 mA. The capacitance at 100 mV and 1 MHz is 278 pF. This SiC rectifier is housed in a TO-252-3, DPAK package and is suitable for surface mount applications. The operating junction temperature range is -55°C to 175°C. This component is commonly utilized in power supply applications, motor control, and renewable energy systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 278pF @ 100mV, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-252 (Type WX) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
Request a Quote
Clients Also Buy
SBRT15U100SP5-13D
DIODE SBR 100V 15A POWERDI5
1N4936G-T
DIODE GEN PURP 400V 1A DO41
B240T-01DL-F
DIODE SCHOTTKY 40V 2A SMB
