DSC08065D1
DIODE SIL CARBIDE 650V 8A TO252Manufacturer: Diodes Incorporated
Categories: Single Diodes
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Diodes Incorporated DSC08065D1 is a 650V Silicon Carbide (SiC) Schottky diode designed for high-efficiency power conversion applications. Featuring an average rectified current capability of 8A and a forward voltage drop of 1.7V at 8A, this component offers significantly reduced switching losses due to its zero reverse recovery time (trr > 500mA) characteristic. The device is housed in a TO-252-3, DPAK (SC-63) surface-mount package for robust thermal management. Its operating junction temperature range is -55°C to 175°C, making it suitable for demanding environments. Typical applications include power factor correction, switch-mode power supplies, and electric vehicle charging infrastructure. The capacitance at 100mV and 1MHz is 295pF, and the reverse leakage current at 650V is 230 µA. This component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 295pF @ 100mV, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-252 (Type WX) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Current - Reverse Leakage @ Vr | 230 µA @ 650 V |
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