DSC06C065D1-13
SILICON CARBIDE RECTIFIER TO252Manufacturer: Diodes Incorporated
Categories: Single Diodes
Quality Control: Learn More
Diodes Incorporated DSC06C065D1-13 is a Silicon Carbide Schottky rectifier designed for demanding applications. This component features a 650 V reverse voltage rating and a 6 A average rectified forward current capability. With a typical forward voltage drop of 1.7 V at 6 A, it offers efficient power conversion. The device exhibits a low reverse leakage current of 170 µA at its maximum reverse voltage of 650 V. Its fast switching speed, characterized as less than 500 ns for currents greater than 200 mA, minimizes switching losses. The junction operating temperature range is from -55°C to 175°C. Packaged in a TO-252-3, DPAK (Type WX) surface mount configuration and supplied on tape and reel, this rectifier is suitable for power supply units, solar inverters, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 184pF @ 100mV, 1MHz |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | TO-252 (Type WX) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 6 A |
| Current - Reverse Leakage @ Vr | 170 µA @ 650 V |
Request a Quote
Clients Also Buy
SBRT15U100SP5-13D
DIODE SBR 100V 15A POWERDI5
S5KC-13
DIODE GEN PURP 800V 5A SMC
FUS1ME
DIODE GEN PURP 1KV 1A F1A
