ZXTS1000NE6TA
TRANS PNP SW LOW SAT SOT23-6Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZXTS1000NE6TA is a PNP bipolar transistor featuring an isolated diode in a SOT-23-6 package. This device offers low saturation voltage, specified at a maximum of 240mV at 100mA collector current and 1.25A collector current. With a collector current capability of up to 1.25A and a collector-emitter breakdown voltage of 12V, it is suitable for various applications. The device boasts a transition frequency of 220MHz and a maximum power dissipation of 885mW. Minimum DC current gain (hFE) is 200 at 500mA and 2V. The ZXTS1000NE6TA is designed for surface mount applications and operates within an ambient temperature range of -55°C to 150°C. It is supplied in Digi-Reel packaging. This component finds utility in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Digi-Reel®Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP + Diode (Isolated) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 240mV @ 100mA, 1.25A |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
| Frequency - Transition | 220MHz |
| Supplier Device Package | SOT-23-6 |
| Current - Collector (Ic) (Max) | 1.25 A |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 885 mW |
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