ZXTS1000E6TC
TRANS PNP 12V 1.25A SOT23-6Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZXTS1000E6TC is a PNP bipolar junction transistor with an integrated isolated diode. This device offers a 12V collector-emitter breakdown voltage and a maximum collector current of 1.25A. It features a transition frequency of 220MHz and a maximum power dissipation of 885mW. The minimum DC current gain (hFE) is specified at 200 when operating at 500mA collector current and 2V collector-emitter voltage. Saturation voltage (Vce Sat) is a maximum of 240mV at 100mA base current and 1.25A collector current. The transistor type is PNP + Diode (Isolated), presented in a SOT-23-6 surface mount package. Operating temperature range is -55°C to 150°C. This component is commonly utilized in consumer electronics and general-purpose amplification applications. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP + Diode (Isolated) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 240mV @ 100mA, 1.25A |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
| Frequency - Transition | 220MHz |
| Supplier Device Package | SOT-23-6 |
| Current - Collector (Ic) (Max) | 1.25 A |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 885 mW |
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