ZXTP25140BFHTA
TRANS PNP 140V 1A SOT23-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZXTP25140BFHTA is a PNP bipolar junction transistor (BJT) designed for robust performance. This surface mount device, housed in a SOT-23-3 package, offers a collector-emitter breakdown voltage of 140V and a continuous collector current capability of 1A. It features a maximum power dissipation of 1.25W and a transition frequency of 75MHz. The DC current gain (hFE) is a minimum of 100 at 10mA collector current and 2V collector-emitter voltage. The device exhibits a Vce(sat) of 260mV at 100mA collector current and 100mA base current, with a collector cutoff current (ICBO) of 50nA. Operating within a temperature range of -55°C to 150°C, this transistor is suitable for applications in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 260mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 2V |
| Frequency - Transition | 75MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 1.25 W |
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