Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

ZXTP2012A

Banner
productimage

ZXTP2012A

TRANS PNP 60V 3.5A TO92-3

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

Quality Control: Learn More

Diodes Incorporated ZXTP2012A is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 3.5A. The device offers a minimum DC current gain (hFE) of 100 at 1A, 1V, and a transition frequency of 120MHz. With a maximum power dissipation of 1W, it is suitable for operation across an extended temperature range of -55°C to 150°C. The ZXTP2012A is provided in an E-Line (TO-92 compatible) package, facilitating through-hole mounting. Its specifications make it a reliable choice for use in industrial control systems, power management circuits, and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseE-Line-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic210mV @ 400mA, 4A
Current - Collector Cutoff (Max)20nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A, 1V
Frequency - Transition120MHz
Supplier Device PackageE-Line (TO-92 compatible)
Current - Collector (Ic) (Max)3.5 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max1 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
DXTN03060BFG-7

PWR MID PERF TRANSISTOR POWERDI3

product image
ZTX553STOA

TRANS PNP 100V 1A E-LINE

product image
DCP69-25-13

TRANS PNP 20V 1A SOT223-3