ZXTNS618MCTA
TRANS NPN 20V 4.5A DFN3020B-8Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZXTNS618MCTA is an NPN bipolar junction transistor with an integrated isolated diode. This component features a 20V collector-emitter breakdown voltage and a maximum collector current of 4.5A. The ZXTNS618MCTA offers a minimum DC current gain (hFE) of 200 at 2A collector current and 2V Vce, with a Vce(sat) of 270mV at 125mA base current and 4.5A collector current. Its transition frequency is 140MHz, and it dissipates a maximum power of 3W. The device is supplied in a DFN3020B-8 package with an exposed pad, suitable for surface mount applications. Operating temperature range is -55°C to 150°C. Applications include power management, general-purpose switching, and automotive systems. This component is provided on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Transistor Type | NPN + Diode (Isolated) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 270mV @ 125mA, 4.5A |
| Current - Collector Cutoff (Max) | 25nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2A, 2V |
| Frequency - Transition | 140MHz |
| Supplier Device Package | DFN3020B-8 |
| Current - Collector (Ic) (Max) | 4.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 3 W |
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