ZXTN5551ZTA
TRANS NPN 160V 0.6A SOT89-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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This Diodes Incorporated NPN bipolar transistor, part number ZXTN5551ZTA, offers robust performance in a SOT-89-3 package. Featuring a collector-emitter breakdown voltage of 160V and a continuous collector current of up to 600mA, this device is suitable for power management and general-purpose amplification applications. The transistor exhibits a maximum power dissipation of 1.2W and a transition frequency of 130MHz. Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 10mA/5V and a low saturation voltage of 200mV at 5mA/50mA. Collector cutoff current is specified at a maximum of 50nA (ICBO). Operating across a temperature range of -55°C to 150°C, this component is supplied in Tape & Reel packaging. Its specifications make it a viable option for automotive, industrial, and consumer electronics designs requiring reliable NPN switching and amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | SOT-89-3 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 1.2 W |
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