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ZXTN5551GTA

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ZXTN5551GTA

TRANS NPN 160V 0.6A SOT223-3

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

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Diodes Incorporated ZXTN5551GTA is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 160V and a continuous collector current capability of 600mA. The ZXTN5551GTA offers a transition frequency of 130MHz and a maximum power dissipation of 2W. It is supplied in a SOT-223-3 surface mount package, suitable for automated assembly processes. Key electrical characteristics include a low Vce(sat) of 200mV at 5mA/50mA and a minimum DC current gain (hFE) of 80 at 10mA/5V. The operating temperature range is -55°C to 150°C. This component is commonly utilized in industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Frequency - Transition130MHz
Supplier Device PackageSOT-223-3
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)160 V
Power - Max2 W

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