ZXTN5551GTA
TRANS NPN 160V 0.6A SOT223-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZXTN5551GTA is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 160V and a continuous collector current capability of 600mA. The ZXTN5551GTA offers a transition frequency of 130MHz and a maximum power dissipation of 2W. It is supplied in a SOT-223-3 surface mount package, suitable for automated assembly processes. Key electrical characteristics include a low Vce(sat) of 200mV at 5mA/50mA and a minimum DC current gain (hFE) of 80 at 10mA/5V. The operating temperature range is -55°C to 150°C. This component is commonly utilized in industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | SOT-223-3 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 2 W |
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