ZXTN5551FLTA
TRANS NPN 160V 0.6A SOT23-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZXTN5551FLTA is an NPN bipolar junction transistor designed for general-purpose amplification and switching. This device features a 160V collector-emitter breakdown voltage and a maximum continuous collector current of 600mA. With a transition frequency of 130MHz and a power dissipation of 330mW, it is suitable for applications requiring moderate frequency performance. The minimum DC current gain (hFE) is specified at 80 at 10mA collector current and 5V Vce. Saturation voltage is a maximum of 200mV at 5mA base current and 50mA collector current. The ZXTN5551FLTA is housed in a SOT-23-3 (TO-236-3, SC-59) surface-mount package, supplied on tape and reel. Operating temperature range is -55°C to 150°C. This component finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 330 mW |
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