ZXTN4002ZTA
TRANS NPN 100V 1A SOT89-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZXTN4002ZTA is an NPN bipolar junction transistor (BJT) designed for demanding applications. This component offers a 100V collector-emitter breakdown voltage (Vceo) and a continuous collector current (Ic) capability of up to 1A. With a maximum power dissipation of 1.5W and a junction temperature range of -55°C to 150°C, it is suitable for challenging environmental conditions. The device features a minimum DC current gain (hFE) of 100 at 150mA and 200mV. Packaged in a SOT-89-3 (TO-243AA) surface-mount format, the ZXTN4002ZTA is AEC-Q101 qualified for automotive applications, and is supplied on tape and reel. This transistor is commonly utilized in automotive control systems and power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 200mV |
| Frequency - Transition | - |
| Supplier Device Package | SOT-89-3 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.5 W |
| Qualification | AEC-Q101 |
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