ZXTN2010ASTZ
TRANS NPN 60V 4.5A TO92-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZXTN2010ASTZ is an NPN bipolar junction transistor (BJT) designed for through-hole mounting in an E-Line (TO-92 compatible) package. This component offers a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 4.5A, with a saturation voltage of 210mV at 200mA collector current and 5A base current. Featuring a DC current gain (hFE) of at least 100 at 2A collector current and 1V collector-emitter voltage, and a transition frequency of 130MHz, the ZXTN2010ASTZ is suitable for applications in consumer electronics and industrial control systems. It operates reliably across a temperature range of -55°C to 150°C and has a maximum power dissipation of 710mW. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | E-Line-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 210mV @ 200mA, 5A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 1V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 4.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 710 mW |
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