ZXTN2010A
TRANS NPN 60V 4.5A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZXTN2010A is an NPN bipolar junction transistor (BJT) designed for power switching and amplification applications. This through-hole component features a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 4.5A. The device exhibits a minimum DC current gain (hFE) of 100 at 2A and 1V, with a transition frequency of 130MHz. Its maximum power dissipation is 1W, and it operates within an ambient temperature range of -55°C to 150°C. The Vce(sat) is specified at 210mV maximum for 200mA base current and 5A collector current. Packaged in an E-Line (TO-92 compatible) format, this transistor is suitable for use in various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | E-Line-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 210mV @ 200mA, 5A |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 1V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 4.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1 W |
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