ZXTCM322TA
TRANS NPN 50V 4A 3MLP/DFNManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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The Diodes Incorporated ZXTCM322TA is an NPN bipolar junction transistor (BJT) designed for surface mount applications within a compact 3-MLP/DFN (2x2) package. This component offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 4 A, making it suitable for power switching and amplification in various electronic systems. Key electrical characteristics include a transition frequency of 165 MHz and a power dissipation rating of 3 W. The transistor exhibits a minimum DC current gain (hFE) of 100 at 2 A and 2 V, with a saturation voltage (Vce(sat)) of 320 mV at 200 mA and 4 A. Operating across an extended temperature range of -55°C to 150°C, the ZXTCM322TA is commonly utilized in automotive, industrial, and consumer electronics sectors. It is supplied on a tape and reel for efficient automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-PowerSMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 320mV @ 200mA, 4A |
| Current - Collector Cutoff (Max) | 25nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 2V |
| Frequency - Transition | 165MHz |
| Supplier Device Package | 3-MLP/DFN (2x2) |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 3 W |
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