ZXT3M322TA
TRANS PNP 40V 3A 3MLP/DFNManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZXT3M322TA, a PNP bipolar junction transistor, offers a 40V collector-emitter breakdown voltage and a maximum collector current of 3A. This surface mount device, packaged in a 3-MLP/DFN (2x2) configuration, features a transition frequency of 190MHz and a maximum power dissipation of 3W. Key parameters include a minimum DC current gain (hFE) of 60 at 1.5A and 2V, and a Vce(sat) of 370mV at 250mA and 2.5A. The device exhibits a maximum collector cutoff current of 25nA and operates within a temperature range of -55°C to 150°C. This component is commonly utilized in power management, lighting, and industrial control applications. The ZXT3M322TA is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-PowerSMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 370mV @ 250mA, 2.5A |
| Current - Collector Cutoff (Max) | 25nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 1.5A, 2V |
| Frequency - Transition | 190MHz |
| Supplier Device Package | 3-MLP/DFN (2x2) |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 3 W |
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