ZXT2M322TA
TRANS PNP 20V 3.5A 3MLP/DFNManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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The Diodes Incorporated ZXT2M322TA is a PNP bipolar junction transistor designed for demanding applications. This robust component features a collector-emitter breakdown voltage of 20V and a maximum continuous collector current of 3.5A. With a transition frequency of 180MHz and a maximum power dissipation of 3W, it is well-suited for power management and signal switching circuits. Key electrical parameters include a minimum DC current gain (hFE) of 150 at 2A and 2V, and a Vce saturation of 300mV at 350mA and 3.5A. The device exhibits a low collector cutoff current of 25nA (max). It is supplied in a compact 3-MLP/DFN (2x2) surface mount package on tape and reel, making it ideal for automated assembly processes. Typical industries utilizing this transistor include automotive and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-PowerSMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 350mA, 3.5A |
| Current - Collector Cutoff (Max) | 25nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 2A, 2V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | 3-MLP/DFN (2x2) |
| Current - Collector (Ic) (Max) | 3.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 3 W |
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