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ZXT13P12DE6TC

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ZXT13P12DE6TC

TRANS PNP 12V 4A SOT23-6

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

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Diodes Incorporated ZXT13P12DE6TC is a PNP bipolar junction transistor designed for high-performance applications. This device features a maximum collector current (Ic) of 4 A and a collector-emitter breakdown voltage (Vce(max)) of 12 V. With a transition frequency (fT) of 55 MHz and a maximum power dissipation of 1.1 W, it is suitable for demanding switching and amplification tasks. The DC current gain (hFE) is specified at a minimum of 300 at 1 A and 2 V. The Vce(sat) is a maximum of 175 mV at 400 mA and 4 A. This transistor is housed in a compact SOT-23-6 surface mount package, supplied on tape and reel. Typical applications include power management and general-purpose switching in automotive and industrial electronics. The operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic175mV @ 400mA, 4A
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1A, 2V
Frequency - Transition55MHz
Supplier Device PackageSOT-23-6
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)12 V
Power - Max1.1 W

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