ZXT11N20DFTA
TRANS NPN 20V 2.5A SOT23-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated NPN Bipolar Junction Transistor, part number ZXT11N20DFTA, is designed for high-efficiency switching and amplification applications. This surface-mount device, housed in a SOT-23-3 package, offers a collector-emitter breakdown voltage of 20V and a continuous collector current capability of 2.5A. It features a transition frequency of 160MHz and a maximum power dissipation of 625mW. Key electrical parameters include a minimum DC current gain (hFE) of 300 at 100mA collector current and 2V Vce, and a saturation voltage (Vce(sat)) of 130mV at 250mA Ic and 2.5A Ic. The ZXT11N20DFTA is suitable for use in power management, consumer electronics, and industrial control systems. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 130mV @ 250mA, 2.5A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA, 2V |
| Frequency - Transition | 160MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 2.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 625 mW |
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