ZXT10P12DE6TC
TRANS PNP 12V 3A SOT23-6Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZXT10P12DE6TC is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 12V and a maximum continuous collector current of 3A, with a saturation voltage of 300mV at 50mA collector current and 3A collector current. The device offers a minimum DC current gain (hFE) of 300 at 100mA collector current and 2V collector-emitter voltage, and a transition frequency of 110MHz. With a maximum power dissipation of 1.1W, it is suitable for operation within an ambient temperature range of -55°C to 150°C. The ZXT10P12DE6TC is packaged in a SOT-23-6 footprint and supplied on tape and reel. This transistor is commonly utilized in power management, battery charging circuits, and general-purpose switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 3A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA, 2V |
| Frequency - Transition | 110MHz |
| Supplier Device Package | SOT-23-6 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 1.1 W |
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