ZXT10N50DE6TC
TRANS NPN 50V 3A SOT23-6Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZXT10N50DE6TC is an NPN bipolar junction transistor designed for high-performance applications. This surface mount device, housed in a SOT-23-6 package, offers a collector-emitter breakdown voltage (Vce) of 50V and a continuous collector current (Ic) capability of up to 3A. Featuring a minimum DC current gain (hFE) of 100 at 2A and 2V, and a transition frequency of 165MHz, it is suitable for demanding switching and amplification tasks. The ZXT10N50DE6TC has a maximum power dissipation of 1.1W and a Vce(sat) of 300mV at 100mA/3A. Its operating temperature range is from -55°C to 150°C. This component is widely utilized in power management, consumer electronics, and industrial control systems. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100mA, 3A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 2V |
| Frequency - Transition | 165MHz |
| Supplier Device Package | SOT-23-6 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1.1 W |
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