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ZX5T869GTA

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ZX5T869GTA

TRANS NPN 25V 7A SOT223-3

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

Quality Control: Learn More

Diodes Incorporated ZX5T869GTA is an NPN bipolar junction transistor (BJT) designed for efficient power switching and amplification. This device offers a maximum collector-emitter voltage (Vce) of 25V and a continuous collector current (Ic) capability of 7A, with a maximum power dissipation of 3W. The ZX5T869GTA features a high DC current gain (hFE) of at least 300 at 1A and 1V, and a transition frequency (fT) of 150MHz. It exhibits a low saturation voltage of 220mV at 150mA collector current and 6.5A collector current. The transistor is housed in a SOT-223-3 (TO-261-4, TO-261AA) surface-mount package, supplied on tape and reel. This component is suitable for applications in power management, voltage regulation, and general-purpose switching circuits across various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic220mV @ 150mA, 6.5A
Current - Collector Cutoff (Max)20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1A, 1V
Frequency - Transition150MHz
Supplier Device PackageSOT-223-3
Current - Collector (Ic) (Max)7 A
Voltage - Collector Emitter Breakdown (Max)25 V
Power - Max3 W

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