ZX5T851ASTZ
TRANS NPN 60V 4.5A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZX5T851ASTZ is an NPN bipolar junction transistor (BJT) designed for through-hole mounting in E-Line (TO-92 compatible) packages, supplied in Cut Tape (CT). This component features a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 4.5A. With a power dissipation capability of 1W and a transition frequency of 130MHz, it is suitable for applications requiring moderate power handling and signal amplification. The ZX5T851ASTZ exhibits a minimum DC current gain (hFE) of 100 at 2A and 1V, and a Vce saturation voltage of 210mV at 200mA and 5A. Low collector cutoff current (ICBO) is specified at 20nA. This transistor finds utility in various industrial and consumer electronics, including power switching and general-purpose amplification circuits. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | E-Line-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 210mV @ 200mA, 5A |
| Current - Collector Cutoff (Max) | 20nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 1V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 4.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1 W |
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