ZX3CDBS1M832TA
TRANS NPN 20V 4.5A 8MLPManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZX3CDBS1M832TA is an NPN bipolar junction transistor with an integrated isolation diode, designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 20V and a maximum collector current of 4.5A. It features a transition frequency of 140MHz and a minimum DC current gain (hFE) of 200 at 2A, 2V. The Vce saturation voltage is rated at a maximum of 270mV at 125mA, 4.5A. This device is specified for operation up to a junction temperature of 150°C and has a maximum power dissipation of 3W. Supplied in an 8-MLP (3x2) package on tape and reel (TR), the ZX3CDBS1M832TA is suitable for power management and signal switching in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Transistor Type | NPN + Diode (Isolated) |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 270mV @ 125mA, 4.5A |
| Current - Collector Cutoff (Max) | 25nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2A, 2V |
| Frequency - Transition | 140MHz |
| Supplier Device Package | 8-MLP (3x2) |
| Current - Collector (Ic) (Max) | 4.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 3 W |
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