ZTX957STOA
TRANS PNP 300V 1A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZTX957STOA is a PNP bipolar junction transistor (BJT) designed for high voltage applications. This through-hole component features a collector-emitter breakdown voltage (Vce(max)) of 300V and a continuous collector current (Ic(max)) of 1A. With a transition frequency (fT) of 85MHz, it offers good performance for switching and amplification in various industrial and consumer electronics. The device exhibits a minimum DC current gain (hFE) of 100 at 500mA and 10V, and a low saturation voltage (Vce(sat)) of 200mV at 300mA and 1A. The ZTX957STOA is supplied in an E-Line package, compatible with TO-92 footprints, and is available on tape and reel. Its maximum power dissipation is 1.2W, and it operates within an extended temperature range of -55°C to 200°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | E-Line-3, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 300mA, 1A |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 10V |
| Frequency - Transition | 85MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 1.2 W |
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