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ZTX956STOB

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ZTX956STOB

TRANS PNP 200V 2A E-LINE

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

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Diodes Incorporated ZTX956STOB is a high-voltage PNP bipolar junction transistor (BJT) designed for demanding applications. This component offers a robust 200V collector-emitter breakdown voltage (Vceo) and can handle a continuous collector current (Ic) of up to 2A. With a minimum DC current gain (hFE) of 100 at 1A and 5V, it provides reliable amplification. The transition frequency (fT) is 110MHz, suitable for moderate frequency switching and amplification tasks. Featuring a maximum power dissipation of 1.58W, this transistor is packaged in an E-Line (TO-92 compatible) through-hole format, supplied on tape and reel. Key specifications include a Vce(sat) of 250mV at 400mA/2A and a low collector cutoff current (ICBO) of 50nA. The operating temperature range extends from -55°C to 200°C. This device finds utility in power switching, linear regulation, and general-purpose amplification circuits across various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseE-Line-3, Formed Leads
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic250mV @ 400mA, 2A
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A, 5V
Frequency - Transition110MHz
Supplier Device PackageE-Line (TO-92 compatible)
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)200 V
Power - Max1.58 W

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