ZTX869STZ
TRANS NPN 25V 5A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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The Diodes Incorporated ZTX869STZ is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component, packaged in an E-Line (TO-92 compatible) format, offers a collector-emitter breakdown voltage of 25V and a continuous collector current capability of up to 5A. With a power dissipation of 1.2W and a transition frequency of 100MHz, it provides efficient operation. Key parameters include a minimum DC current gain (hFE) of 300 at 1A and 1V, and a saturation voltage (Vce Sat) of 220mV at 100mA and 5A. The device exhibits a low collector cutoff current of 50nA (ICBO). Operating temperature range is -55°C to 200°C (TJ). This component is commonly utilized in industrial and consumer electronics where reliable amplification and switching are required. The ZTX869STZ is supplied in Tape & Box (TB) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | E-Line-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 220mV @ 100mA, 5A |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1A, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 1.2 W |
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