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ZTX869

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ZTX869

TRANS NPN 25V 5A E-LINE

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

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Diodes Incorporated ZTX869 is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This component features a maximum collector current of 5A and a collector-emitter breakdown voltage of 25V. It offers a minimum DC current gain (hFE) of 300 at 1A and 1V, with a transition frequency of 100MHz. The ZTX869 dissipates a maximum power of 1.2W and operates within an extended temperature range of -55°C to 200°C. Packaged in an E-Line (TO-92 compatible) through-hole format, this device is suitable for use in industrial and consumer electronics sectors. The saturation voltage (Vce Sat) at 100mA collector current and 5A collector current is specified at 220mV maximum.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseE-Line-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic220mV @ 100mA, 5A
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1A, 1V
Frequency - Transition100MHz
Supplier Device PackageE-Line (TO-92 compatible)
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)25 V
Power - Max1.2 W

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