ZTX857STOB
TRANS NPN 300V 3A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZTX857STOB is an NPN bipolar junction transistor designed for through-hole mounting in an E-Line package. This device offers a maximum collector-emitter breakdown voltage of 300V and can handle a continuous collector current of up to 3A. The ZTX857STOB exhibits a minimum DC current gain (hFE) of 100 at 500mA and 10V, with a transition frequency rated at 80MHz. It features a maximum collector-emitter saturation voltage of 250mV at 600mA and 3A, and a maximum power dissipation of 1.2W. The collector cutoff current (ICBO) is specified at a maximum of 50nA. This component is suitable for applications in power switching and amplification across various industrial sectors. The part is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | E-Line-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 600mA, 3A |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 10V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 1.2 W |
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