ZTX857STOA
TRANS NPN 300V 3A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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The Diodes Incorporated ZTX857STOA is an NPN bipolar junction transistor designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 300V and a continuous collector current capability of up to 3A. With a transition frequency of 80MHz and a maximum power dissipation of 1.2W, it is suitable for demanding switching and amplification tasks. The minimum DC current gain (hFE) is specified at 100 for an Ic of 500mA and Vce of 10V, while Vce(sat) is typically 250mV at 600mA collector current. The transistor is housed in an E-Line package, compatible with TO-92 footprints, and is supplied on tape and reel. This device finds application in power supply circuits, lighting control, and general-purpose amplification across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | E-Line-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 600mA, 3A |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 10V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 1.2 W |
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