ZTX857QSTZ
PWR HI VOLTAGE TRANSISTOR EP3 AMManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZTX857QSTZ is an NPN bipolar junction transistor designed for high voltage applications. This component features a collector-emitter breakdown voltage (Vce(max)) of 300 V and a continuous collector current (Ic) capability of 3 A, with a maximum power dissipation of 1.2 W. The transition frequency (fT) is specified at 80 MHz. The transistor exhibits a minimum DC current gain (hFE) of 100 at 500 mA and 10 V, and a saturation voltage (Vce(sat)) of 250 mV at 600 mA and 3 A. It is housed in an E-Line (TO-92 compatible) package with formed leads for through-hole mounting and is supplied in Tape & Box (TB) packaging. This device is suitable for power supply circuits and general-purpose amplification in various industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | E-Line-3, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 600mA, 3A |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 10V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 1.2 W |
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