ZTX855STZ
TRANS NPN 150V 4A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZTX855STZ is an NPN bipolar junction transistor designed for high-voltage applications. This through-hole component features a maximum collector-emitter breakdown voltage of 150V and can handle a continuous collector current of up to 4A. With a power dissipation of 1.2W and a transition frequency of 90MHz, it offers robust performance in demanding environments. The DC current gain (hFE) is a minimum of 100 at 1A and 5V, with a Vce(sat) of 260mV at 400mA and 4A. The device operates within a junction temperature range of -55°C to 200°C and is supplied in an E-Line package, compatible with TO-92 footprints. This transistor is utilized across various industrial sectors including power management and consumer electronics. The ZTX855STZ is available in Tape & Box packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | E-Line-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 260mV @ 400mA, 4A |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 5V |
| Frequency - Transition | 90MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 1.2 W |
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