ZTX855STOB
TRANS NPN 150V 4A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZTX855STOB is a high-performance NPN bipolar junction transistor designed for demanding applications. This E-Line packaged device offers a 150V collector-emitter breakdown voltage and a continuous collector current capability of 4A. With a transition frequency of 90MHz and a maximum power dissipation of 1.2W, the ZTX855STOB is suitable for power switching and amplification circuits across industrial automation, consumer electronics, and power management sectors. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 1A and 5V, and a Vce saturation of 260mV at 400mA and 4A. The low collector cutoff current (ICBO) is 50nA. This component is supplied in Tape & Reel packaging for efficient automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | E-Line-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 260mV @ 400mA, 4A |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 5V |
| Frequency - Transition | 90MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 1.2 W |
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