ZTX855STOA
TRANS NPN 150V 4A E-LINEManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated ZTX855STOA is an NPN bipolar junction transistor designed for high-voltage applications. This through-hole component features a 150V collector-emitter breakdown voltage and a maximum continuous collector current of 4A. The ZTX855STOA offers a transition frequency of 90MHz and a maximum power dissipation of 1.2W. It is supplied in an E-Line package, compatible with TO-92 footprints, and is available on tape and reel. Key parameters include a minimum DC current gain (hFE) of 100 at 1A, 5V, and a Vce(sat) of 260mV at 400mA, 4A. The device exhibits a low collector cutoff current (ICBO) of 50nA and operates over a junction temperature range of -55°C to 200°C. This transistor is suitable for applications in power switching and general-purpose amplification within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | E-Line-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 260mV @ 400mA, 4A |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 5V |
| Frequency - Transition | 90MHz |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 1.2 W |
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